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Cascadable Silicon Bipolar MMIC Amplifier Technical Data
MSA-0670
Features
* Cascadable 50 Gain Block * Low Operating Voltage: 3.5 V Typical Vd * 3 dB Bandwidth: DC to 1.0 GHz * High Gain: 19.5 dB Typical at 0.5 GHz * Low Noise Figure: 2.8 dB Typical at 0.5 GHz * Hermetic Gold-ceramic Microstrip Package
high reliability package. This MMIC is designed for use as a general purpose 50 gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications. The MSA-series is fabricated using HP's 10 GHz fT, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.
70 mil Package
Description
The MSA-0670 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic,
Typical Biasing Configuration
R bias VCC > 5 V
RFC (Optional) 4 C block 3 IN 1
MSA
C block OUT Vd = 3.5 V
2
5965-9586E
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MSA-0670 Absolute Maximum Ratings
Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 50 mA 200 mW +13 dBm 200C -65 to 200C Thermal Resistance[2,4]: jc = 130C/W
Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25C. 3. Derate at 7.7 mW/C for TC > 174C. 4. The small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. See MEASUREMENTS section "Thermal Resistance" for more information.
Electrical Specifications[1], TA = 25C
Symbol
GP GP f3 dB VSWR NF P1 dB IP3 tD Vd dV/dT
Parameters and Test Conditions: Id = 16 mA, ZO = 50
Power Gain (|S21| 2) Gain Flatness 3 dB Bandwidth Input VSWR Output VSWR 50 Noise Figure Output Power at 1 dB Gain Compression Third Order Intercept Point Group Delay Device Voltage Device Voltage Temperature Coefficient f = 0.1 to 1.5 GHz f = 0.1 to 1.5 GHz f = 0.5 GHz f = 0.5 GHz f = 0.5 GHz f = 0.5 GHz f = 0.1 GHz f = 0.1 to 0.6 GHz
Units
dB dB GHz
Min.
19.0
Typ.
20.5 0.7 1.0 1.9:1 1.8:1
Max.
22.0 1.0
dB dBm dBm psec V mV/C 3.1
2.8 2.0 14.5 200 3.5 -8.0
4.0
3.9
Note: 1. The recommended operating current range for this device is 12 to 30 mA. Typical performance as a function of current is on the following page.
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MSA-0670 Typical Scattering Parameters (ZO = 50 , TA = 25C, Id = 16 mA)
Freq. GHz S11 Mag Ang dB S21 Mag Ang dB S12 Mag Ang Mag S22 Ang k
0.1 0.2 0.3 0.4 0.5 0.6 0.8 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Note:
.05 .07 .09 .11 .13 .15 .19 .24 .31 .38 .42 .46 .48 .48 .48 .48
-147 -134 -126 -123 -123 -123 -126 -129 -141 -157 -167 178 173 164 155 143
20.5 20.4 20.1 19.9 19.6 19.2 17.4 16.5 15.2 13.0 11.1 9.5 7.9 6.6 5.5 4.5
10.62 10.41 10.16 9.85 9.50 9.09 8.28 7.46 5.76 4.47 3.59 2.97 2.49 2.13 1.87 1.67
172 164 156 148 141 135 122 110 87 68 57 45 33 22 13 3
-23.3 -23.0 -22.6 -22.4 -22.0 -21.3 -20.7 -19.8 -18.2 -17.2 -16.7 -16.4 -16.2 -16.1 -15.9 -15.8
.068 .070 .074 .076 .079 .082 .093 .103 .124 .138 .146 .152 .155 .156 .161 .163
4 8 12 14 26 18 22 22 23 19 20 16 11 9 5 3
.05 .09 .13 .16 .20 .22 .25 .27 .27 .24 .21 .17 .14 .11 .11 .14
-69 -92 -104 -113 -121 -128 -141 -154 -176 166 158 156 163 -175 -154 -141
1.05 1.04 1.02 1.00 0.99 0.97 0.94 0.92 0.91 0.94 1.01 1.07 1.15 1.27 1.35 1.46
1. A model for this device is available in the DEVICE MODELS section.
Typical Performance, TA = 25C
(unless otherwise noted)
21 Gain Flat to DC 18 15
G p (dB) Id (mA) G p (dB)
25 TC = +125C TC = +25C 20 TC = -55C
25 0.1 GHz 0.5 GHz 20 1.0 GHz 15 2.0 GHz 10
12 9 6 3 0 0.1 0.3 0.5 1.0 3.0 6.0 FREQUENCY (GHz)
15
10
5 0 0 1 2 3 Vd (V) 4 5
5
0 10 15 20 25 30 I d (mA)
Figure 1. Typical Power Gain vs. Frequency, TA = 25C, Id = 16 mA.
Figure 2. Device Current vs. Voltage.
Figure 3. Power Gain vs. Current.
21
Gp (dB)
12 I d = 30 mA 8
P1 dB (dBm)
4.0
20 19 18 17 5 5 NF P1 dB 4
NF (dB)
3.5
NF (dB)
GP
4
I d = 20 mA
3.0
P1 dB (dBm)
4 3 2 1 0 -55 -25 +25 +85
3 2 1 0
I d = 16 mA 0 I d = 12 mA -4 0.1
2.5 I d = 12 mA I d = 16 mA, 30 mA I d = 20 mA 0.1 0.2 0.3 0.5 1.0 2.0 4.0
2.0 0.2 0.3 0.5 1.0 2.0 4.0 FREQUENCY (GHz)
+125
TEMPERATURE (C)
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain Compression, NF and Power Gain vs. Case Temperature, f = 0.5 GHz, Id=16mA.
Figure 5. Output Power at 1 dB Gain Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
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70 mil Package Dimensions
.040 1.02 4 GROUND .020 .508 RF INPUT 1 RF OUTPUT AND BIAS 3
2
GROUND
Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = 0.005 mm .xx = 0.13
.004 .002 .10 .05
.070 1.70
.495 .030 12.57 .76
.035 .89
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